Перегляд за автором "Golenkov, A.G."

Сортувати за: Порядок: Результатів:

  • Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern 
    Sizov, F.F.; Tsybrii, Z.F.; Zabudsky, V.V.; Sakhno, M.V.; Shevchik-Shekera, A.V.; Dukhnin, S.Ye.; Golenkov, A.G.; Dieguez, E.; Dvoretsky, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas ...
  • Infrared blocking materials 
    Tsybrii, Z.F.; Sizov, F.F.; Golenkov, A.G. (Доповіді НАН України, 2020)
    AlN thin films on the flexible polymeric Teflon and Mylar substrates show characteristics of efficient infrared (IR) blocking filters (IR “stealth”). They can suppress heat flows from the warm parts of objects (T ~ 300÷500 ...
  • IR sensor readout devices with source input circuits 
    Sizov, F.F.; Reva, V.P.; Derkach, Yu.P.; Kononenko, Yu.G.; Golenkov, A.G.; Korinets, S.V.; Darchuk, S.D.; Filenko, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, ...
  • Noise in HgCdTe LWIR arrays 
    Sizov, F.F.; Golenkov, A.G.; Zabudsky, V.V.; Reva, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Mercury cadmium telluride (MCT) hybrid arrays for long-wavelength infrared (LWIR) applications with n+-p-diodes and n-channel charged coupled devices (CCD) silicon readouts were designed, manufactured and tested. Performance ...
  • Performance limits of terahertz zero biased rectifying detectors for direct detection 
    Golenkov, A.G.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in ...
  • Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs 
    Golenkov, A.G.; Zhuravlev, K.S.; Gumenjuk-Sichevska, J.V.; Lysiuk, I.O.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise ...